Sains Malaysiana 48(5)(2019): 1129–1135
http://dx.doi.org/10.17576/jsm-2019-4805-22
Peningkatan Kecekapan Pemisahan Air
Menggunakan g-C3N4 yang
Disinar Gama
(Improvement of Water Splitting Efficiency
using Gamma Irradiated g-C3N4)
NURUL AIDA
MOHAMED1,
JAVAD
SAFAEI1,
AZNAN
FAZLI
ISMAIL2,3,
MOHAMAD
FIRDAUS
MOHAMAD
NOH1,
MOHD
FAIRUZ
SOH1,
MOHD
ADIB
IBRAHIM1,
NORASIKIN
AHMAD
LUDIN1
& MOHD ASRI MAT
TERIDI1*
1Solar Energy Research Institute (SERI),
Universiti Kebangsaan Malaysia, 43600 ÿÈÕ´óÈüapp Bangi, Selangor Darul
Ehsan, Malaysia
2Nuclear Science Program, Faculty of
Science and Technology, Universiti Kebangsaan Malaysia, 43600
ÿÈÕ´óÈüapp Bangi, Selangor Darul Ehsan, Malaysia
3Center for Frontier Science, Faculty
of Science and Technology, Universiti Kebangsaan Malaysia, 43600
ÿÈÕ´óÈüapp Bangi, Selangor Darul Ehsan, Malaysia
Received:
3 July 2018/Accepted: 13 March 2019
ABSTRAK
Dalam kajian ini, kesan sinar
gama ke atas bahan semikonduktor g-C3N4 kGy
(0.1 kGy dan 0.5) dibincangkan dan dibandingkan dengan sampel
yang tidak disinar untuk melihat perbezaanya. Bahan g-C3N4 disintesis
dari urea melalui proses pempolimeran haba pada suhu 520°C.
Struktur dan morfologi g-C3N4 dianalisis dengan menggunakan pembelauan
Sinar- X (XRD), spektroskopi transformasi Fourier
inframerah (FT-IR), mikroskop pengimbas elektron pancaran medan dengan
spektroskopi tenaga sinar-X (FESEM-EDX), spektroskopi cahaya
nampak - ultraungu (UV-Vis) dan ketumpatan arus (LSV).
Sinar gama telah mengubah struktur ikatan g-C3N4 dan
mengurangkan sela jalur iaitu daripada 2.80 eV kepada 2.72 eV.
Di samping itu, sampel g-C3N4 yang disinar pada 0.1 kGy menghasilkan
prestasi lima kali ganda lebih tinggi iaitu daripada 3.59 μAcm-2
kepada 14.2 μAcm-2 pada 1.23 V lawan Ag/AgCl dalam larutan elektrolit 0.5
M Na2SO4 (pH7). Kesimpulannya, keputusan kajian
menunjukkan bahan semikonduktor yang dirawat dengan sinar gama
berpotensi untuk meningkatkan fotoelektrokimia (PEC)
pemisahan air.
Kata kunci: g-C3N4,
pemisahan air; sela jalur tenaga; sinar gama
ABSTRACT
In this study, the effect of
gamma radiation on g-C3N4 semiconductor
material (0.1 and 0.5 kGy) was discussed and compared to the
non-irradiated sample in order to investigate the difference.
The g-C3N4 material
was synthesised from urea by thermal polymerization at the temperature
of 520°C. The structure and morphology of the g-C3N4 were
analysed by X-ray diffractometer (XRD), Fourier transform infrared
spectroscopy (FTIR), field emission scanning electron
microscope with energy dispersive X-ray spectroscopy (FESEM-EDX),
ultraviolet- visible (UV-Vis), profilometer and photocurrent
density (LSV). The finding indicates that gamma radiation has changed
the bonding structure of the g-C3N4 and
reduces the optical band gap energy from 2.80 to 2.72 eV. In
addition, the irradiated g-C3N4 sample at 0.1 kGy has five times better
performance which increases from 3.59 μAcm-2
to 14.2 μAcm-2 at 1.23 V versus Ag/AgCl in 0.5 M Na2SO4 electrolyte
solution (pH7). As a conclusion, this study shows that the treated
semiconductor material with gamma-ray potentially to increase
the photoelectrochemical efficiency.
Keywords: g-C3N4;
energy band gap; gamma radiation; water splitting
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*Corresponding author;
email: asri@ukm.edu.my