Sains Malaysiana 48(5)(2019):
1129–1135
http://dx.doi.org/10.17576/jsm-2019-4805-22
Peningkatan Kecekapan
Pemisahan Air Menggunakan
g-C3N4 yang Disinar
Gama
(Improvement of Water Splitting Efficiency
using Gamma Irradiated g-C3N4)
NURUL AIDA
MOHAMED1,
JAVAD
SAFAEI1,
AZNAN
FAZLI
ISMAIL2,3,
MOHAMAD
FIRDAUS
MOHAMAD
NOH1,
MOHD
FAIRUZ
SOH1,
MOHD
ADIB
IBRAHIM1,
NORASIKIN
AHMAD
LUDIN1
& MOHD ASRI MAT
TERIDI1*
1Solar Energy Research Institute (SERI),
Universiti Kebangsaan
Malaysia, 43600 ÿÈÕ´óÈüapp Bangi, Selangor
Darul Ehsan, Malaysia
2Nuclear Science Program, Faculty of
Science and Technology, Universiti Kebangsaan Malaysia, 43600 ÿÈÕ´óÈüapp Bangi,
Selangor Darul Ehsan, Malaysia
3Center for Frontier Science, Faculty
of Science and Technology, Universiti
Kebangsaan Malaysia, 43600 ÿÈÕ´óÈüapp Bangi,
Selangor Darul Ehsan, Malaysia
Diserahkan: 3 Julai
2018/Diterima: 13 Mac 2019
ABSTRAK
Dalam kajian ini, kesan
sinar gama
ke atas bahan
semikonduktor g-C3N4 kGy (0.1 kGy dan
0.5) dibincangkan dan
dibandingkan dengan sampel yang tidak disinar untuk melihat
perbezaanya. Bahan
g-C3N4 disintesis dari urea melalui proses pempolimeran haba pada suhu
520°C. Struktur dan
morfologi g-C3N4 dianalisis dengan menggunakan pembelauan Sinar- X (XRD), spektroskopi
transformasi Fourier inframerah
(FT-IR),
mikroskop pengimbas
elektron pancaran medan dengan spektroskopi
tenaga sinar-X
(FESEM-EDX),
spektroskopi cahaya
nampak - ultraungu (UV-Vis)
dan ketumpatan
arus (LSV). Sinar
gama telah mengubah
struktur ikatan
g-C3N4 dan mengurangkan sela jalur iaitu
daripada 2.80 eV kepada
2.72 eV. Di samping itu,
sampel g-C3N4 yang
disinar pada
0.1 kGy menghasilkan prestasi lima kali ganda lebih tinggi iaitu
daripada 3.59 μAcm-2 kepada 14.2 μAcm-2 pada 1.23 V lawan Ag/AgCl dalam larutan
elektrolit 0.5 M Na2SO4 (pH7).
Kesimpulannya, keputusan
kajian menunjukkan bahan semikonduktor yang dirawat dengan sinar gama berpotensi
untuk meningkatkan
fotoelektrokimia (PEC) pemisahan
air.
Kata kunci:
g-C3N4, pemisahan
air; sela jalur
tenaga; sinar gama
ABSTRACT
In this study, the effect of
gamma radiation on g-C3N4 semiconductor
material (0.1 and 0.5 kGy) was discussed
and compared to the non-irradiated sample in order to investigate
the difference. The g-C3N4 material
was synthesised from urea by thermal
polymerization at the temperature of 520°C. The structure and
morphology of the g-C3N4 were
analysed by X-ray diffractometer (XRD),
Fourier transform infrared spectroscopy (FTIR), field emission scanning
electron microscope with energy dispersive X-ray spectroscopy
(FESEM-EDX),
ultraviolet- visible (UV-Vis), profilometer
and photocurrent density (LSV). The finding indicates that gamma
radiation has changed the bonding structure of the g-C3N4 and
reduces the optical band gap energy from 2.80 to 2.72 eV. In addition,
the irradiated g-C3N4 sample at 0.1 kGy
has five times better performance which increases from 3.59 μAcm-2
to 14.2 μAcm-2 at 1.23 V versus Ag/AgCl in
0.5 M Na2SO4 electrolyte solution (pH7). As a conclusion,
this study shows that the treated semiconductor material with
gamma-ray potentially to increase the photoelectrochemical
efficiency.
Keywords: g-C3N4;
energy band gap; gamma radiation; water splitting
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*Pengarang
untuk surat-menyurat;
email: asri@ukm.edu.my